Materials Characterization and Electrical Performance of Bilayer Structures for Enhanced Electrodeposition in Programmable Metallization Cells

Long channel lateral programmable metallization cell (PMC) devices, in which a metal electrodeposit is formed on solid electrolyte between two coplanar electrodes several microns apart, have variety of applications beyond standard microelectronics. Whereas fast growth over considerable distances can be achieved using high ion mobility chalcogenide electrolytes, the use more foundry-friendly materials, including copper-doped transition oxides, leads to extremely low rates due their and resistivity. In this paper, material system comprising Cu2O/CuWO3 bilayer by temperature oxidation Cu WO3 examined. The Cu2O overlayer provides resistance parallel path for electrons, allowing electrodeposition occur along entire length device, thereby increasing rate at fills channel. A study devices prepared under different conditions, resulting copper oxide thicknesses concentrations layers, shows influence processing conditions composition, activation energy current transport, morphology, electrical characteristics. It demonstrated that very wide range operating possible, bridging 14 μm long channels 3 s 2 V bias.